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| DAN217U / BAV99U / DAN217 Diodes Switching diode DAN217U / BAV99U / DAN217 1 BAV99U is only sold in countries other than Japan. !Application Ultra high speed switching !External dimensions (Units : mm) DAN217U / BAV99U 1 2.00.2 0.3 +0.1 -0 0.150.05 (All leads have the same dimensions) !Construction Silicon epitaxial planar ROHM : UMD3 EIAJ : SC-70 JEDEC : SOT-323 DAN217 !Circuit 2.90.2 1.90.2 0.95 0.95 1.1 +0.2 -0.1 0.80.1 1.6 +0.2 -0.1 2.80.2 00.1 (All leads have the same dimensions) ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346 !Absolute maximum ratings (Ta=25C) Type Peak reverse voltage VRM(V) 80 80 80 DC reverse voltage VR(V) 80 80 80 Peak forward current IFM(mA) 300 300 300 Mean rectifying current IO(mA) 100 100 100 Storage Surge Power Junction current dissipation temperature temperature (1s) (TOTAL) Isurge(mA) Pd(mW) Tj(C) Tstg(C) 4000 4000 4000 200 200 200 150 150 150 -55 +150 -55 +150 -55 +150 DAN217U BAV99U DAN217 0.30.6 +0.1 0.4 -0.05 +0.1 0.15 -0.06 0.1 BA A7 !Features 1) Small surface mounting type. (UMD3,SMD3) 2) Two diode elements are connected in series (VF x 2) per circuit. 1.30.1 0.65 0.65 1.250.1 0.90.1 0.2 0.70.1 2.10.1 00.1 1/2 DAN217U / BAV99U / DAN217 Diodes !Electrical characteristics (Ta=25C) Forward voltage Type VF(V) Max. 1.2 1.2 1.2 Cond. IF(mA) 100 100 100 Reverse current IR(A) Max. 0.2 0.2 0.1 Cond. VR(V) 70 70 70 13 13 46 Fig DAN217U BAV99U DAN217 !Electrical characteristic curves (Ta=25C) (DAN217U,BAV99U)"""Fig.13 CAPACITANCE BETWEEN TERMINALS : CT (pF) 1.0 1.0 100m 2.0 f=1MHz FORWARD CURRENT : IF(A) REVERSE CURRENT : IR(A) 100m 125C 1.8 10m 75C 10m 1m 100 10 1 25C 1.6 75 C 25 C -25 1m C 1.4 100 5C -25C 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 12 1.2 0 50 100 1.0 0 5 10 15 20 25 30 35 FORWARD VOLTAGE : VF(V) REVERSE VOLTAGE : VR(V) REVERSE VOLTAGE : VR (V) Fig.1 Forward characteristics Fig.2 Reverse characteristics Fig.3 Capacitance between terminals characteristics (DAN217) """Fig.46 CAPACITANCE BETWEEN TERMINALS : CT (pF) 50 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 1000 FORWARD CURRENT : IF(mA) Ta=100C 75C 50C f=1MHz 20 REVERSE CURRENT : IR(nA) 10 5 2 1 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Ta=85C 50C 25C 0C -30C 100 10 25C 0C -25C 1 0.1 0.01 0 10 20 30 40 50 60 70 80 5 10 15 20 25 30 35 FORWARD VOLTAGE : VF(V) REVERSE VOLTAGE : VR(V) REVERSE VOLTAGE : VR (V) Fig.4 Forward characteristics Fig.5 Reverse characteristics Fig.6 Capacitance between terminals characteristics 2/2 |
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